There are no models available for this part yet.
Overview of BY359-1300 by Philips Semiconductors
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Healthcare
Medical Imaging
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| XPN1300ANC | Toshiba Electronic Devices & Storage Corporation | N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF) | |
| BLA1011-300 | Rochester Electronics LLC | BLA1011-300 - 300W LDMOS Avionics Power Transistor (Ampleon Die) |
CAD Models for BY359-1300 by Philips Semiconductors
Part Data Attributes for BY359-1300 by Philips Semiconductors
|
|
|
|---|---|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Transferred
|
|
Ihs Manufacturer
|
PHILIPS SEMICONDUCTORS
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
Configuration
|
SINGLE
|
|
Diode Type
|
RECTIFIER DIODE
|
|
Forward Voltage-Max (VF)
|
2.3 V
|
|
JESD-609 Code
|
e0
|
|
Non-rep Pk Forward Current-Max
|
60 A
|
|
Number of Elements
|
1
|
|
Number of Phases
|
1
|
|
Operating Temperature-Max
|
125 °C
|
|
Output Current-Max
|
6.5 A
|
|
Rep Pk Reverse Voltage-Max
|
1300 V
|
|
Reverse Recovery Time-Max
|
0.6 µs
|
|
Surface Mount
|
NO
|
|
Terminal Finish
|
Tin/Lead (Sn/Pb)
|