Part Details for BUZ42 by Siemens
Overview of BUZ42 by Siemens
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (9 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for BUZ42
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Quest Components | 4 A, 500 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 | 149 |
|
$0.8325 / $1.3875 | Buy Now |
|
|
ComSIT USA | N-CHANNEL ENHANCEMENT IGBT TO-220 Power Field-Effect Transistor, 4A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | Europe - 1513 |
|
RFQ |
Part Details for BUZ42
BUZ42 CAD Models
BUZ42 Part Data Attributes:
|
|
BUZ42
Siemens
Buy Now
Datasheet
|
Compare Parts:
BUZ42
Siemens
Power Field-Effect Transistor, 4A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
|
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | SIEMENS A G | |
| Part Package Code | SFM | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 220 mJ | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 40 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 75 W | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 16 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 150 ns | |
| Turn-on Time-Max (ton) | 85 ns |
Alternate Parts for BUZ42
This table gives cross-reference parts and alternative options found for BUZ42. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ42, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BUZ215 | 5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | BUZ42 vs BUZ215 |
| BUZ41A | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Siemens | BUZ42 vs BUZ41A |
| IRF830 | 4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | BUZ42 vs IRF830 |
| IRF833 | Power Field-Effect Transistor, 4A I(D), 450V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | BUZ42 vs IRF833 |
| IRF830 | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | BUZ42 vs IRF830 |
| IRF830PBF | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | BUZ42 vs IRF830PBF |
| IRF830 | 4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | BUZ42 vs IRF830 |
| IRF830PBF | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Vishay Siliconix | BUZ42 vs IRF830PBF |
| IRF830 | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | BUZ42 vs IRF830 |