There are no models available for this part yet.
Overview of BUZ384 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 6 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
CAD Models for BUZ384 by Infineon Technologies AG
Part Data Attributes for BUZ384 by Infineon Technologies AG
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Part Life Cycle Code
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Obsolete
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Ihs Manufacturer
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INFINEON TECHNOLOGIES AG
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Reach Compliance Code
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compliant
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ECCN Code
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EAR99
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Configuration
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SINGLE
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Drain Current-Max (ID)
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10.5 A
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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Number of Elements
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1
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
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125 W
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Surface Mount
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NO
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Alternate Parts for BUZ384
This table gives cross-reference parts and alternative options found for BUZ384. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ384, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BUZ330 | Power Field-Effect Transistor, 9.5A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | Siemens | BUZ384 vs BUZ330 |
| IRFP344 | Power Field-Effect Transistor, 9.5A I(D), 450V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | International Rectifier | BUZ384 vs IRFP344 |
| IRFP448 | Power Field-Effect Transistor, 11A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | International Rectifier | BUZ384 vs IRFP448 |
| IRFP344PBF | Power Field-Effect Transistor, 9.5A I(D), 450V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 | International Rectifier | BUZ384 vs IRFP344PBF |
| BUZ339 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Infineon Technologies AG | BUZ384 vs BUZ339 |
| IRFP452 | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | International Rectifier | BUZ384 vs IRFP452 |