There are no models available for this part yet.
Overview of BUZ332A by Siemens
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for BUZ332A by Siemens
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
| Quest Components | 8 A, 600 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | 478 |
|
$1.2500 / $2.5000 | Buy Now |
CAD Models for BUZ332A by Siemens
Part Data Attributes for BUZ332A by Siemens
|
|
|
|---|---|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Transferred
|
|
Ihs Manufacturer
|
SIEMENS A G
|
|
Package Description
|
FLANGE MOUNT, R-PSFM-T3
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8541.29.00.95
|
|
Avalanche Energy Rating (Eas)
|
570 mJ
|
|
Configuration
|
SINGLE
|
|
DS Breakdown Voltage-Min
|
600 V
|
|
Drain Current-Max (ID)
|
8 A
|
|
Drain-source On Resistance-Max
|
0.9 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
Feedback Cap-Max (Crss)
|
100 pF
|
|
JEDEC-95 Code
|
TO-218
|
|
JESD-30 Code
|
R-PSFM-T3
|
|
JESD-609 Code
|
e0
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
FLANGE MOUNT
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation Ambient-Max
|
150 W
|
|
Power Dissipation-Max (Abs)
|
150 W
|
|
Pulsed Drain Current-Max (IDM)
|
32 A
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
NO
|
|
Terminal Finish
|
Tin/Lead (Sn/Pb)
|
|
Terminal Form
|
THROUGH-HOLE
|
|
Terminal Position
|
SINGLE
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
|
Turn-off Time-Max (toff)
|
430 ns
|
|
Turn-on Time-Max (ton)
|
140 ns
|