There are no models available for this part yet.
Overview of BUZ331 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 3 listings )
- Number of FFF Equivalents: ( 1 replacement )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 1 option )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Energy and Power Systems
Renewable Energy
Medical Imaging
Robotics and Drones
Price & Stock for BUZ331 by Infineon Technologies AG
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
2156-BUZ331-ND
|
DigiKey | N-CHANNEL POWER MOSFET Min Qty: 122 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
215 In Stock |
|
$2.4800 | Buy Now | |
DISTI #
BUZ331
|
Avnet Americas | Trans MOSFET N-CH 500V 8A 3-Pin(3+tab) TO-218AA - Rail/Tube (Alt: BUZ331) RoHS: Not Compliant Min Qty: 147 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 215 Partner Stock |
|
$2.2300 / $2.4900 | Buy Now | |
Rochester Electronics | BUZ331 - Power Field-Effect Transistor, 8A, 500V, 0.8ohm, N-Channel, MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 215 |
|
$2.1200 / $2.4900 | Buy Now |
CAD Models for BUZ331 by Infineon Technologies AG
Part Data Attributes for BUZ331 by Infineon Technologies AG
|
|
---|---|
Rohs Code
|
No
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
Reach Compliance Code
|
not_compliant
|
ECCN Code
|
EAR99
|
Factory Lead Time
|
4 Weeks
|
Additional Feature
|
AVALANCHE RATED
|
Avalanche Energy Rating (Eas)
|
570 mJ
|
Configuration
|
SINGLE
|
DS Breakdown Voltage-Min
|
500 V
|
Drain Current-Max (ID)
|
8 A
|
Drain-source On Resistance-Max
|
0.8 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-218
|
JESD-30 Code
|
R-PSFM-T3
|
JESD-609 Code
|
e0
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
FLANGE MOUNT
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
125 W
|
Pulsed Drain Current-Max (IDM)
|
32 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Finish
|
TIN LEAD
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for BUZ331
This table gives cross-reference parts and alternative options found for BUZ331. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ331, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BUZ331 | Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | Siemens | BUZ331 vs BUZ331 |