Datasheets
BUZ11-E3045 by:

Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

Part Details for BUZ11-E3045 by Siemens

Overview of BUZ11-E3045 by Siemens

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Part Details for BUZ11-E3045

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BUZ11-E3045 Part Data Attributes

BUZ11-E3045 Siemens
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BUZ11-E3045 Siemens Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Part Package Code TO-220AB
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 14 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.04 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 250 pF
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 75 W
Pulsed Drain Current-Max (IDM) 120 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 270 ns
Turn-on Time-Max (ton) 110 ns

Alternate Parts for BUZ11-E3045

This table gives cross-reference parts and alternative options found for BUZ11-E3045. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ11-E3045, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUZ11-E3045 Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN Infineon Technologies AG BUZ11-E3045 vs BUZ11-E3045

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