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Transistors Power Field-Effect Transistors BUP63

BUP63
Description: 5.56A, 400V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3

Overview of BUP63 by TT Electronics Power and Hybrid / Semelab Limited

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Part Data Attributes for BUP63 by TT Electronics Power and Hybrid / Semelab Limited
Parametric Data

BUP63
TT Electronics Power and Hybrid / Semelab Limited
Buy Now
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Active
Ihs Manufacturer
SEMELAB LTD
Package Description
FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code
compliant
ECCN Code
EAR99
Configuration
SINGLE
DS Breakdown Voltage-Min
400 V
Drain Current-Max (ID)
5.56 A
Drain-source On Resistance-Max
1.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-3
JESD-30 Code
O-MBFM-P2
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
METAL
Package Shape
ROUND
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
PIN/PEG
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
Want to compare parts?
  1. BUP63
    TT Electronics Power and Hybrid / Semelab Limited
    5.56A, 400V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
    VS

Alternate Parts for BUP63

This table gives cross-reference parts and alternative options found for BUP63. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUP63, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
BUP63 Power Field-Effect Transistor, 5.56A I(D), 400V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors BUP63 vs BUP63
BUP63R1 5.56A, 400V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited BUP63 vs BUP63R1
Part Number Description Manufacturer Compare
IRF333R Power Field-Effect Transistor, 4.5A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor BUP63 vs IRF333R
2N6759 Power Field-Effect Transistor, 4.5A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) BUP63 vs 2N6759
2N6759R1 4.5A, 350V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited BUP63 vs 2N6759R1
UFN323 Power Field-Effect Transistor, 2.5A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) BUP63 vs UFN323
2N6759 4.5A, 350V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Motorola Mobility LLC BUP63 vs 2N6759
IRF323 TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,2.8A I(D),TO-204AA Intersil Corporation BUP63 vs IRF323
2N6759 Power Field-Effect Transistor, 4.5A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor BUP63 vs 2N6759
2N6759R1 Power Field-Effect Transistor, 4.5A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors BUP63 vs 2N6759R1
MTM5N35 5A, 350V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Motorola Mobility LLC BUP63 vs MTM5N35
VN2450N8-G 0.25A, 500V, 13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA Microchip Technology Inc BUP63 vs VN2450N8-G

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