Datasheets
BUP61R1 by:

Power Field-Effect Transistor, 5.56A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,

Part Details for BUP61R1 by TT Electronics Resistors

Overview of BUP61R1 by TT Electronics Resistors

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Part Details for BUP61R1

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BUP61R1 Part Data Attributes:

BUP61R1 TT Electronics Resistors
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BUP61R1 TT Electronics Resistors Power Field-Effect Transistor, 5.56A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TT ELECTRONICS PLC
Package Description FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 350 V
Drain Current-Max (ID) 5.56 A
Drain-source On Resistance-Max 1.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-3
JESD-30 Code O-MBFM-P2
JESD-609 Code e1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN SILVER COPPER
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Element Material SILICON

Alternate Parts for BUP61R1

This table gives cross-reference parts and alternative options found for BUP61R1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUP61R1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUP61R1 5.56A, 350V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited BUP61R1 vs BUP61R1
Part Number Description Manufacturer Compare
BUP62R1 Power Field-Effect Transistor, 6.8A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors BUP61R1 vs BUP62R1
BUP61R1 5.56A, 350V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited BUP61R1 vs BUP61R1
IRF322 Power Field-Effect Transistor, 2.8A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier BUP61R1 vs IRF322
2N6760TX Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Microsemi Corporation BUP61R1 vs 2N6760TX
IRF332 TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,4.5A I(D),TO-204AA Intersil Corporation BUP61R1 vs IRF332
IRF320 TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,3.3A I(D),TO-204AA Intersil Corporation BUP61R1 vs IRF320
JANTX2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG BUP61R1 vs JANTX2N6760
BUP69R1 7.93A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited BUP61R1 vs BUP69R1
2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) BUP61R1 vs 2N6760
IRF332 Power Field-Effect Transistor, 4.5A I(D), 400V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor BUP61R1 vs IRF332

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