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BUP410D by:

Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN

Part Details for BUP410D by Siemens

Overview of BUP410D by Siemens

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Applications Space Technology Aerospace and Defense Energy and Power Systems

Price & Stock for BUP410D

Part # Distributor Description Stock Price Buy
Bristol Electronics   197
RFQ
Quest Components INSULATED GATE BIPOLAR TRANSISTOR, 13A I(C), 600V V(BR)CES, N-CHANNEL, TO-220AB 480
  • 1 $7.5000
  • 54 $3.2500
  • 155 $3.0000
$3.0000 / $7.5000 Buy Now
Quest Components INSULATED GATE BIPOLAR TRANSISTOR, 13A I(C), 600V V(BR)CES, N-CHANNEL, TO-220AB 153
  • 1 $7.5000
  • 54 $3.5000
  • 144 $3.2500
$3.2500 / $7.5000 Buy Now

Part Details for BUP410D

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BUP410D Part Data Attributes

BUP410D Siemens
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BUP410D Siemens Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer SIEMENS A G
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature HIGH SPEED
Collector Current-Max (IC) 13 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 220 ns
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 50 W
Qualification Status Not Qualified
Rise Time-Max (tr) 90 ns
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Max (toff) 240 ns
Turn-off Time-Nom (toff) 175 ns
Turn-on Time-Max (ton) 35 ns
Turn-on Time-Nom (ton) 20 ns
VCEsat-Max 2.7 V

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