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BUK9Y53-100B,115 by:

BUK9Y53-100B - N-channel TrenchMOS logic level FET SOIC 4-Pin

Part Details for BUK9Y53-100B,115 by NXP Semiconductors

Overview of BUK9Y53-100B,115 by NXP Semiconductors

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Available Datasheets

Part # Manufacturer Description Datasheet
CY7C0853AV-100BBI Rochester Electronics CY7C0853 - Flex36 3.3V 256K X 36 Synchronous Dual-Port RAM, Industrial Temp
100B484S2-7Y8 Renesas Electronics Corporation 4K X 4 ECL I/O SRAM
100B484S4Y8 Renesas Electronics Corporation 4K X 4 ECL I/O SRAM

Price & Stock for BUK9Y53-100B,115

Part # Distributor Description Stock Price Buy
Quest Components POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 1-ELEMENT, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET 410
  • 1 $1.4000
  • 19 $0.7000
  • 87 $0.4200
$0.4200 / $1.4000 Buy Now

Part Details for BUK9Y53-100B,115

BUK9Y53-100B,115 CAD Models

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BUK9Y53-100B,115 Part Data Attributes

BUK9Y53-100B,115 NXP Semiconductors
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BUK9Y53-100B,115 NXP Semiconductors BUK9Y53-100B - N-channel TrenchMOS logic level FET SOIC 4-Pin
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code SOIC
Pin Count 4
Manufacturer Package Code SOT669
Reach Compliance Code not_compliant
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 23 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 75 W
Surface Mount YES
Terminal Finish TIN
Time@Peak Reflow Temperature-Max (s) 30

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