Part Details for BUK466-200A by NXP Semiconductors
Overview of BUK466-200A by NXP Semiconductors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for BUK466-200A
BUK466-200A CAD Models
BUK466-200A Part Data Attributes:
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BUK466-200A
NXP Semiconductors
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Datasheet
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BUK466-200A
NXP Semiconductors
TRANSISTOR 19 A, 200 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 150 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 19 A | |
| Drain-source On Resistance-Max | 0.16 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 100 pF | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 150 W | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 76 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 255 ns | |
| Turn-on Time-Max (ton) | 90 ns |
Alternate Parts for BUK466-200A
This table gives cross-reference parts and alternative options found for BUK466-200A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUK466-200A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2SK2534 | Power Field-Effect Transistor, 16A I(D), 250V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ZP, 3 PIN | SANYO Electric Co Ltd | BUK466-200A vs 2SK2534 |
| STB18N20T4 | 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-2 | STMicroelectronics | BUK466-200A vs STB18N20T4 |
| IRF640STRL | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | Vishay Intertechnologies | BUK466-200A vs IRF640STRL |
| IRF642-001 | Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | BUK466-200A vs IRF642-001 |
| IRF642 | 16A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | BUK466-200A vs IRF642 |
| IRF642 | Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | BUK466-200A vs IRF642 |
| MTP12N20 | 12A, 200V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | BUK466-200A vs MTP12N20 |
| FQB19N20TM | 19.4A, 200V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | Rochester Electronics LLC | BUK466-200A vs FQB19N20TM |
| IRF642 | Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | BUK466-200A vs IRF642 |
| IRF640STR | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | BUK466-200A vs IRF640STR |