BUK456-800B
Description: TRANSISTOR 3.5 A, 800 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power

Overview of BUK456-800B by NXP Semiconductors

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Available Datasheets

Part # Manufacturer Description Datasheet
BLM15PX800BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 80ohm POWRTRN
DAC8800BR/883C Analog Devices 8-BIT VOUT CMOS DAC-LEV.B
R8A77800BDBGGV Renesas Electronics Corporation 32-bit Microcontrollers

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Part Data Attributes for BUK456-800B by NXP Semiconductors

BUK456-800B
NXP Semiconductors
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
Package Description
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
800 V
Drain Current-Max (ID)
3.5 A
Drain-source On Resistance-Max
4 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
50 pF
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
125 W
Pulsed Drain Current-Max (IDM)
14 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
210 ns
Turn-on Time-Max (ton)
65 ns
Want to compare parts?
  1. BUK456-800B
    NXP Semiconductors
    TRANSISTOR 3.5 A, 800 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
    VS

Alternate Parts for BUK456-800B

This table gives cross-reference parts and alternative options found for BUK456-800B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUK456-800B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
2SK904 Power Field-Effect Transistor, 3A I(D), 800V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, SC-46, 3 PIN Fuji Electric Co Ltd BUK456-800B vs 2SK904
BUZ80 Power Field-Effect Transistor, 2.6A I(D), 800V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Siemens BUK456-800B vs BUZ80
BUZ80 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Semiconductor Technology Inc BUK456-800B vs BUZ80
BUZ80 3.4A, 800V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics BUK456-800B vs BUZ80
Part Number Description Manufacturer Compare
2SK904 Power Field-Effect Transistor, 3A I(D), 800V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, SC-46, 3 PIN Fuji Electric Co Ltd BUK456-800B vs 2SK904
BUZ80 Power Field-Effect Transistor, 2.6A I(D), 800V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Infineon Technologies AG BUK456-800B vs BUZ80
BUZ80 Power Field-Effect Transistor, 2.6A I(D), 800V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Siemens BUK456-800B vs BUZ80
BUZ80 3.4A, 800V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics BUK456-800B vs BUZ80

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