Part Details for BUK438W-800A127 by NXP Semiconductors
Overview of BUK438W-800A127 by NXP Semiconductors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for BUK438W-800A127
BUK438W-800A127 CAD Models
BUK438W-800A127 Part Data Attributes
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BUK438W-800A127
NXP Semiconductors
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Datasheet
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BUK438W-800A127
NXP Semiconductors
TRANSISTOR 7.6 A, 800 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, FET General Purpose Power
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 7.6 A | |
| Drain-source On Resistance-Max | 1.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BUK438W-800A127
This table gives cross-reference parts and alternative options found for BUK438W-800A127. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUK438W-800A127, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| APT1004RBNR | 4.4A, 1000V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD | Microsemi Corporation | BUK438W-800A127 vs APT1004RBNR |
| BUK438W-800B | TRANSISTOR 6.6 A, 800 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, FET General Purpose Power | NXP Semiconductors | BUK438W-800A127 vs BUK438W-800B |
| APT1002R4BNR-BUTT | 6.5A, 1000V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Microsemi Corporation | BUK438W-800A127 vs APT1002R4BNR-BUTT |
| BUK438W-800A | TRANSISTOR 7.6 A, 800 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, FET General Purpose Power | NXP Semiconductors | BUK438W-800A127 vs BUK438W-800A |
| BFC43 | 4.4A, 1000V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | TT Electronics Power and Hybrid / Semelab Limited | BUK438W-800A127 vs BFC43 |
| BUK438W-800B,127 | 6.6A, 800V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | NXP Semiconductors | BUK438W-800A127 vs BUK438W-800B,127 |
| APT1004RBNR | Power Field-Effect Transistor, 4.4A I(D), 1000V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | Advanced Power Technology | BUK438W-800A127 vs APT1004RBNR |
| BFC43 | Power Field-Effect Transistor, 4.4A I(D), 1000V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | TT Electronics Resistors | BUK438W-800A127 vs BFC43 |
| APT802R4BN-BUTT | Power Field-Effect Transistor, 5.5A I(D), 800V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Advanced Power Technology | BUK438W-800A127 vs APT802R4BN-BUTT |
| APT802R4BN-BUTT | 5.5 A, 800 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Microsemi Corporation | BUK438W-800A127 vs APT802R4BN-BUTT |