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BUK109-50GS by:

TRANSISTOR 29 A, 50 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK, 3 PIN, FET General Purpose Power

Part Details for BUK109-50GS by NXP Semiconductors

Overview of BUK109-50GS by NXP Semiconductors

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for BUK109-50GS

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BUK109-50GS Part Data Attributes

BUK109-50GS NXP Semiconductors
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BUK109-50GS NXP Semiconductors TRANSISTOR 29 A, 50 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK, 3 PIN, FET General Purpose Power
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature ESD PROTECTION
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 29 A
Drain-source On Resistance-Max 0.06 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 75 W
Pulsed Drain Current-Max (IDM) 120 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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