Datasheets
BU2708DF by:

8A, 825V, NPN, Si, POWER TRANSISTOR, PLASTIC, SOT-199, 3 PIN

Part Details for BU2708DF by NXP Semiconductors

Overview of BU2708DF by NXP Semiconductors

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Part Details for BU2708DF

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BU2708DF Part Data Attributes:

BU2708DF NXP Semiconductors
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BU2708DF NXP Semiconductors 8A, 825V, NPN, Si, POWER TRANSISTOR, PLASTIC, SOT-199, 3 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code SFM
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Manufacturer Package Code SOT199
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection ISOLATED
Collector Current-Max (IC) 8 A
Collector-Emitter Voltage-Max 825 V
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 45 W
Power Dissipation-Max (Abs) 45 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 6020 ns
VCEsat-Max 1 V

Alternate Parts for BU2708DF

This table gives cross-reference parts and alternative options found for BU2708DF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BU2708DF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MJE3055TA Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin Motorola Semiconductor Products BU2708DF vs MJE3055TA
2N3172.MOD Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Resistors BU2708DF vs 2N3172.MOD
2SC5901 Power Bipolar Transistor, 8A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-94, TOP-3E-A1, 3 PIN Panasonic Electronic Components BU2708DF vs 2SC5901
2N5467.MOD 3A, 400V, NPN, Si, POWER TRANSISTOR, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited BU2708DF vs 2N5467.MOD
2SB628S Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN NEC Electronics America Inc BU2708DF vs 2SB628S
MJ2955CECC-B 15A, 60V, PNP, Si, POWER TRANSISTOR, TO-3, TO-3, 2 PIN TT Electronics Power and Hybrid / Semelab Limited BU2708DF vs MJ2955CECC-B
2N5632.MOD 10A, 100V, NPN, Si, POWER TRANSISTOR, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Power and Hybrid / Semelab Limited BU2708DF vs 2N5632.MOD
MJ15016.MOD Power Bipolar Transistor, 15A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Resistors BU2708DF vs MJ15016.MOD
MJE8502WD Power Bipolar Transistor, 5A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin Motorola Semiconductor Products BU2708DF vs MJE8502WD
2N5733.MOD Power Bipolar Transistor, 30A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN TT Electronics Resistors BU2708DF vs 2N5733.MOD

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