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Part Details for BSZ150N10LS3GATMA1 by Infineon Technologies AG
Overview of BSZ150N10LS3GATMA1 by Infineon Technologies AG
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSZ150N10LS3GATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
97Y1271
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Newark | Mosfet, N-Ch, 100V, 40A, Pg-Tsdson-8, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:40A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Infineon BSZ150N10LS3GATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 2105 |
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$0.1970 | Buy Now |
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DISTI #
98AK5426
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Newark | Mosfet, N-Channel, 100V, 40A, Pg-Tsdson Rohs Compliant: Yes |Infineon BSZ150N10LS3GATMA1 RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.6910 / $0.7030 | Buy Now |
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DISTI #
BSZ150N10LS3GATMA1CT-ND
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DigiKey | MOSFET N-CH 100V 40A 8TSDSON Min Qty: 1 Lead time: 18 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
7006 In Stock |
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$0.6388 / $2.2300 | Buy Now |
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DISTI #
BSZ150N10LS3GATMA1
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Avnet Americas | Trans MOSFET N-CH 100V 8A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ150N10LS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 10000 |
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RFQ | |
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DISTI #
97Y1271
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Avnet Americas | Trans MOSFET N-CH 100V 8A 8-Pin TSDSON T/R - Product that comes on tape, but is not reeled (Alt: 97Y1271) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 3 Days Container: Ammo Pack | 2105 Partner Stock |
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$0.8200 / $1.3700 | Buy Now |
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DISTI #
726-BSZ150N10LS3GATM
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Mouser Electronics | MOSFETs N-Ch 100V 40A TSDSON-8 RoHS: Compliant | 34145 |
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$0.6380 / $1.5100 | Buy Now |
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Future Electronics | Single N-Channel 100 V 15 mOhm 26 nC OptiMOS™ Power Mosfet - TSDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Container: Reel | 60000Reel |
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$0.6250 | Buy Now |
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Future Electronics | Single N-Channel 100 V 15 mOhm 26 nC OptiMOS™ Power Mosfet - TSDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Container: Reel | 0Reel |
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$0.6250 | Buy Now |
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ComSIT USA | OPTIMOS 3 POWER-TRANSISTOR Power Field-Effect Transistor, 40A I(D), 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant |
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RFQ | |
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DISTI #
C1S322000626366
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Chip1Stop | MOSFET RoHS: Compliant | 4428 |
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$0.5467 / $1.3573 | Buy Now |
Part Details for BSZ150N10LS3GATMA1
BSZ150N10LS3GATMA1 CAD Models
BSZ150N10LS3GATMA1 Part Data Attributes
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BSZ150N10LS3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSZ150N10LS3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, S-PDSO-N5 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 80 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 40 A | |
| Drain-source On Resistance-Max | 0.02 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSZ150N10LS3GATMA1
This table gives cross-reference parts and alternative options found for BSZ150N10LS3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSZ150N10LS3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| YJD40G10A | Power Field-Effect Transistor, 40A I(D), 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | Yangzhou Yangjie Electronics Co Ltd | BSZ150N10LS3GATMA1 vs YJD40G10A |