Part Details for BSZ088N03MSGATMA1 by Infineon Technologies AG
Overview of BSZ088N03MSGATMA1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSZ088N03MSGATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
BSZ088N03MSGATMA1
|
TME | Transistor: N-MOSFET, unipolar, 30V, 40A, 35W, PG-TSDSON-8 Min Qty: 1 | 0 |
|
$0.2940 / $0.7620 | RFQ |
|
Chip1Cloud | MOSFET N-CH 30V 40A TSDSON-8 | 46000 |
|
RFQ |
Part Details for BSZ088N03MSGATMA1
BSZ088N03MSGATMA1 CAD Models
BSZ088N03MSGATMA1 Part Data Attributes
|
BSZ088N03MSGATMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
BSZ088N03MSGATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 40A I(D), 30V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
|
Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC, TSDSON-8 | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 52 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 25 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 40 A | |
Drain-source On Resistance-Max | 0.0097 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 160 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for BSZ088N03MSGATMA1
This table gives cross-reference parts and alternative options found for BSZ088N03MSGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSZ088N03MSGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
HAT2096H-EL-E | Nch Single Power Mosfet 30V 40A 5.3Mohm Lfpak, LFPAK, /Embossed Tape | Renesas Electronics Corporation | BSZ088N03MSGATMA1 vs HAT2096H-EL-E |