Datasheets
BSS138 by:

Small Signal MOSFET; Channel Polarity: N channel; PD Max (W): 0.3W; V(BR)DSS Min (V): 50V; ID Max (A): 0.2A; RDS(ON) Max (Ω): 3.5 Ohm; ID (A): 0.22A; VGS (V): 10V; ID (mA): 250mA; GFS Min (S): 0.1 S; VDS (V): 25V; ID (A) 1: 0.2A; Package: SOT-23

Part Details for BSS138 by Galaxy Microelectronics

Overview of BSS138 by Galaxy Microelectronics

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Part Details for BSS138

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BSS138 Part Data Attributes:

BSS138 Galaxy Microelectronics
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BSS138 Galaxy Microelectronics Small Signal MOSFET; Channel Polarity: N channel; PD Max (W): 0.3W; V(BR)DSS Min (V): 50V; ID Max (A): 0.2A; RDS(ON) Max (Ω): 3.5 Ohm; ID (A): 0.22A; VGS (V): 10V; ID (mA): 250mA; GFS Min (S): 0.1 S; VDS (V): 25V; ID (A) 1: 0.2A; Package: SOT-23
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Part Package Code SOT-23
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 0.2 A
Drain-source On Resistance-Max 3.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 8 pF
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSS138

This table gives cross-reference parts and alternative options found for BSS138. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS138, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSS138W-7-F Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Diodes Incorporated BSS138 vs BSS138W-7-F
BSS138W-7 Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 Diodes Incorporated BSS138 vs BSS138W-7
BSS138W-7-F Small Signal Field-Effect Transistor, SPC Multicomp BSS138 vs BSS138W-7-F
BSS138 Small Signal Field-Effect Transistor, Galaxy Semi-Conductor Co Ltd BSS138 vs BSS138
BSS138 Small Signal Field-Effect Transistor, Taitron Components Inc BSS138 vs BSS138
BSS138W-13 Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 Diodes Incorporated BSS138 vs BSS138W-13

Resources and Additional Insights for BSS138

Reference Designs related to BSS138

  • 15W Qi transmitter for charging smartphones
    The 15W wireless power transmitter evaluation module is a high-performance, easy-to-use development kit designed for applications up to 15W of power transfer. It supports an input voltage range of 9-12V and is compatible with QC 3.0 adapters.

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