BSS131E6433
Description: Small Signal Field-Effect Transistor, 0.11A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3

Overview of BSS131E6433 by Infineon Technologies AG

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Part Data Attributes for BSS131E6433 by Infineon Technologies AG

BSS131E6433
Infineon Technologies AG
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
SMALL OUTLINE, R-PDSO-G3
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Additional Feature
LOGIC LEVEL COMPATIBLE
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
240 V
Drain Current-Max (ID)
0.11 A
Drain-source On Resistance-Max
14 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
4.2 pF
JESD-30 Code
R-PDSO-G3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
0.36 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Element Material
SILICON
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  1. BSS131E6433
    Infineon Technologies AG
    Small Signal Field-Effect Transistor, 0.11A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3
    VS

Alternate Parts for BSS131E6433

This table gives cross-reference parts and alternative options found for BSS131E6433. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS131E6433, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
BSS131-TAPE-13 TRANSISTOR 100 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal NXP Semiconductors BSS131E6433 vs BSS131-TAPE-13
BSS131 Small Signal Field-Effect Transistor, 0.11A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-23, 3 PIN Infineon Technologies AG BSS131E6433 vs BSS131
BSS131E6433 Small Signal Field-Effect Transistor, 0.1A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Siemens BSS131E6433 vs BSS131E6433
BSS131 TRANSISTOR 100 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal NXP Semiconductors BSS131E6433 vs BSS131
BSS131-TAPE-7 TRANSISTOR 100 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal NXP Semiconductors BSS131E6433 vs BSS131-TAPE-7
BSS131E-6327 100mA, 240V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN Siemens BSS131E6433 vs BSS131E-6327
BSS131 Small Signal Field-Effect Transistor, 0.1A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Siemens BSS131E6433 vs BSS131
BSS131E6327 Small Signal Field-Effect Transistor, 0.1A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Siemens BSS131E6433 vs BSS131E6327
BSS131L6327 Small Signal Field-Effect Transistor, 0.11A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG BSS131E6433 vs BSS131L6327
Part Number Description Manufacturer Compare
BS107RLRF Small Signal Field-Effect Transistor, 0.25A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Motorola Semiconductor Products BSS131E6433 vs BS107RLRF
BSS131-TAPE-13 TRANSISTOR 100 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal NXP Semiconductors BSS131E6433 vs BSS131-TAPE-13
VN1306N3P001 Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Supertex Inc BSS131E6433 vs VN1306N3P001
2N5640 30V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, PLASTIC, TO-226AA, 3 PIN onsemi BSS131E6433 vs 2N5640
BST82 Small Signal Field-Effect Transistor, 0.175A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET YAGEO Corporation BSS131E6433 vs BST82
SJVP0109N9 Small Signal Field-Effect Transistor, 0.25A I(D), 90V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-52 Supertex Inc BSS131E6433 vs SJVP0109N9
FJZ594JC Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, SOT-623F, 3 PIN Fairchild Semiconductor Corporation BSS131E6433 vs FJZ594JC
2SK303-2-TB Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-236 SANYO Electric Co Ltd BSS131E6433 vs 2SK303-2-TB
2SK303-18-TB Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-236 SANYO Electric Co Ltd BSS131E6433 vs 2SK303-18-TB
BSS306NL6327HTSA1 Small Signal Field-Effect Transistor, 2.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG BSS131E6433 vs BSS306NL6327HTSA1

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