BSS123LT1
Description: Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Overview of BSS123LT1 by Motorola Semiconductor Products

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 4 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Price & Stock for BSS123LT1 by Motorola Semiconductor Products

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   4360
RFQ
Quest Components MOSFET Transistor, N-Channel, TO-236AB 31509
  • 1 $0.0800
  • 5,557 $0.0260
  • 30,770 $0.0240
$0.0240 / $0.0800 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-236AB 2400
  • 1 $0.2000
  • 64 $0.0900
  • 557 $0.0600
$0.0600 / $0.2000 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-236AB 776
  • 1 $0.7500
  • 134 $0.3750
  • 534 $0.3000
$0.3000 / $0.7500 Buy Now

CAD Models for BSS123LT1 by Motorola Semiconductor Products
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Part Data Attributes for BSS123LT1 by Motorola Semiconductor Products

BSS123LT1
Motorola Semiconductor Products
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
MOTOROLA INC
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.21.00.95
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
0.17 A
Drain-source On Resistance-Max
6 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
4 pF
JEDEC-95 Code
TO-236AB
JESD-30 Code
R-PDSO-G3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
0.225 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Element Material
SILICON
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  1. BSS123LT1
    Motorola Semiconductor Products
    Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
    VS

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