Datasheets
BSP324E6327 by:

Power Field-Effect Transistor, 0.17A I(D), 400V, 25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for BSP324E6327 by Siemens

Overview of BSP324E6327 by Siemens

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Applications Consumer Electronics Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for BSP324E6327

Part # Distributor Description Stock Price Buy
Perfect Parts Corporation   28224
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Part Details for BSP324E6327

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BSP324E6327 Part Data Attributes

BSP324E6327 Siemens
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BSP324E6327 Siemens Power Field-Effect Transistor, 0.17A I(D), 400V, 25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Package Description SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 0.17 A
Drain-source On Resistance-Max 25 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 0.68 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON

Alternate Parts for BSP324E6327

This table gives cross-reference parts and alternative options found for BSP324E6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP324E6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSP298E-6327 0.5A, 400V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN Siemens BSP324E6327 vs BSP298E-6327
BSP299E-6327 0.4A, 500V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN Infineon Technologies AG BSP324E6327 vs BSP299E-6327
BSP17E6327 Power Field-Effect Transistor, 3.2A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Siemens BSP324E6327 vs BSP17E6327
Part Number Description Manufacturer Compare
BSP298E6327 Power Field-Effect Transistor, 0.5A I(D), 400V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Siemens BSP324E6327 vs BSP298E6327
BSP17E6327 Power Field-Effect Transistor, 3.2A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Siemens BSP324E6327 vs BSP17E6327
BSP299E-6327 0.4A, 500V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN Infineon Technologies AG BSP324E6327 vs BSP299E-6327

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