There are no models available for this part yet.
Overview of BSP298E6327 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 6 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 6 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Energy and Power Systems
Renewable Energy
CAD Models for BSP298E6327 by Infineon Technologies AG
Part Data Attributes for BSP298E6327 by Infineon Technologies AG
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|
|
|---|---|
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Rohs Code
|
No
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|
Part Life Cycle Code
|
Obsolete
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Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
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Package Description
|
SMALL OUTLINE, R-PDSO-G4
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Pin Count
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4
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Reach Compliance Code
|
compliant
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ECCN Code
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EAR99
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Additional Feature
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AVALANCHE RATED
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Avalanche Energy Rating (Eas)
|
130 mJ
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Case Connection
|
DRAIN
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Configuration
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SINGLE
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DS Breakdown Voltage-Min
|
400 V
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Drain Current-Max (ID)
|
0.5 A
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Drain-source On Resistance-Max
|
3 Ω
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FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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JESD-30 Code
|
R-PDSO-G4
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Moisture Sensitivity Level
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1
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Number of Elements
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1
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Number of Terminals
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4
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Peak Reflow Temperature (Cel)
|
255
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
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1.8 W
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Pulsed Drain Current-Max (IDM)
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2 A
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Qualification Status
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Not Qualified
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Surface Mount
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YES
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Terminal Form
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GULL WING
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Terminal Position
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DUAL
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Time@Peak Reflow Temperature-Max (s)
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30
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Transistor Element Material
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SILICON
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Alternate Parts for BSP298E6327
This table gives cross-reference parts and alternative options found for BSP298E6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP298E6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSP299H6327 | Power Field-Effect Transistor, 0.4A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-4 | Infineon Technologies AG | BSP298E6327 vs BSP299H6327 |
| BSP17E6327 | Power Field-Effect Transistor, 3.2A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Infineon Technologies AG | BSP298E6327 vs BSP17E6327 |
| BSP299E6327 | Power Field-Effect Transistor, 0.4A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Infineon Technologies AG | BSP298E6327 vs BSP299E6327 |
| BSP299 | Power Field-Effect Transistor, 0.4A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Siemens | BSP298E6327 vs BSP299 |
| BSP299L6327HUSA1 | Power Field-Effect Transistor, 0.4A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-4 | Infineon Technologies AG | BSP298E6327 vs BSP299L6327HUSA1 |
| BSP299L6327 | Power Field-Effect Transistor, 0.4A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4 | Infineon Technologies AG | BSP298E6327 vs BSP299L6327 |