There are no models available for this part yet.
Overview of BSP123L6433 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 3 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 3 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for BSP123L6433 by Infineon Technologies AG
Part Data Attributes for BSP123L6433 by Infineon Technologies AG
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|---|---|
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Rohs Code
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Yes
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Part Life Cycle Code
|
Active
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Ihs Manufacturer
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INFINEON TECHNOLOGIES AG
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Package Description
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SMALL OUTLINE, R-PDSO-G4
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Pin Count
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4
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Reach Compliance Code
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compliant
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ECCN Code
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EAR99
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Additional Feature
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LOGIC LEVEL COMPATIBLE
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Case Connection
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DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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100 V
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Drain Current-Max (ID)
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0.37 A
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Drain-source On Resistance-Max
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6 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JESD-30 Code
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R-PDSO-G4
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JESD-609 Code
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e3
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Number of Elements
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1
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Number of Terminals
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4
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
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1.79 W
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Pulsed Drain Current-Max (IDM)
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1.48 A
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Qualification Status
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Not Qualified
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Surface Mount
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YES
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Terminal Finish
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MATTE TIN
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Terminal Form
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GULL WING
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Terminal Position
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DUAL
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Transistor Element Material
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SILICON
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Alternate Parts for BSP123L6433
This table gives cross-reference parts and alternative options found for BSP123L6433. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP123L6433, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSP123E6327 | Power Field-Effect Transistor, 0.38A I(D), 100V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Infineon Technologies AG | BSP123L6433 vs BSP123E6327 |
| BSP123E6327 | Power Field-Effect Transistor, 0.38A I(D), 100V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Siemens | BSP123L6433 vs BSP123E6327 |
| BSP123 | Power Field-Effect Transistor, 0.37A I(D), 100V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN | Infineon Technologies AG | BSP123L6433 vs BSP123 |