Part Details for BSM35GB120DN2HOSA1 by Infineon Technologies AG
Overview of BSM35GB120DN2HOSA1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSM35GB120DN2HOSA1
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
BSM35GB120DN2HOSA1
|
Avnet Americas | Transistor IGBT Module N-CH 1200V 50A 20V Screw Mount Tray - Trays (Alt: BSM35GB120DN2HOSA1) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tray | 3 Partner Stock |
|
RFQ | |
|
Rochester Electronics | BSM35GB120 - Insulated Gate Bipolar Transistor Module ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 1 |
|
$54.1600 / $63.7200 | Buy Now |
Part Details for BSM35GB120DN2HOSA1
BSM35GB120DN2HOSA1 CAD Models
BSM35GB120DN2HOSA1 Part Data Attributes
|
BSM35GB120DN2HOSA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
BSM35GB120DN2HOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
|
Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | MODULE | |
Package Description | MODULE-7 | |
Pin Count | 7 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 35 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
JESD-30 Code | R-XUFM-X7 | |
Number of Elements | 2 | |
Number of Terminals | 7 | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 450 ns | |
Turn-on Time-Nom (ton) | 120 ns |
Alternate Parts for BSM35GB120DN2HOSA1
This table gives cross-reference parts and alternative options found for BSM35GB120DN2HOSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM35GB120DN2HOSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
C67070-A2111-A70 | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, | Eupec Gmbh & Co Kg | BSM35GB120DN2HOSA1 vs C67070-A2111-A70 |
BSM35GB120DN2 | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, | Siemens | BSM35GB120DN2HOSA1 vs BSM35GB120DN2 |