Datasheets
BSM20GD60DLCE3224BOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel, MODULE-17

Part Details for BSM20GD60DLCE3224BOSA1 by Infineon Technologies AG

Overview of BSM20GD60DLCE3224BOSA1 by Infineon Technologies AG

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Part Details for BSM20GD60DLCE3224BOSA1

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BSM20GD60DLCE3224BOSA1 Part Data Attributes

BSM20GD60DLCE3224BOSA1 Infineon Technologies AG
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BSM20GD60DLCE3224BOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel, MODULE-17
Pbfree Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description FLANGE MOUNT, R-XUFM-X17
Pin Count 17
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 32 A
Collector-Emitter Voltage-Max 600 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-X17
Number of Elements 6
Number of Terminals 17
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 146 ns
Turn-on Time-Nom (ton) 71 ns

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