Part Details for BSM150GAL120DN2HOSA1 by Infineon Technologies AG
Overview of BSM150GAL120DN2HOSA1 by Infineon Technologies AG
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Part Details for BSM150GAL120DN2HOSA1
BSM150GAL120DN2HOSA1 CAD Models
BSM150GAL120DN2HOSA1 Part Data Attributes
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BSM150GAL120DN2HOSA1
Infineon Technologies AG
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Datasheet
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BSM150GAL120DN2HOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | MODULE-7 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 210 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| JESD-30 Code | R-XUFM-X7 | |
| Number of Elements | 1 | |
| Number of Terminals | 7 | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 670 ns | |
| Turn-on Time-Nom (ton) | 300 ns |