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Transistors Power Field-Effect Transistors BSL211SPH6327XTSA1

BSL211SPH6327XTSA1
Infineon Technologies AG
Description: Power Field-Effect Transistor, 4.7A I(D), 20V, 0.067ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TSOP-6

Overview of BSL211SPH6327XTSA1 by Infineon Technologies AG

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Price & Stock for BSL211SPH6327XTSA1 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 12AC9451
Newark Mosfet, Aec-Q101, P-Ch, -20V, Tsop, Transistor Polarity:P Channel, Continuous Drain Current Id:-4.7A, Drain Source Voltage Vds:-20V, On Resistance Rds(On):0.054Ohm, Rds(On) Test Voltage Vgs:-4.5V, Threshold Voltage Vgs:-900Mv, Power Rohs Compliant: Yes |Infineon BSL211SPH6327XTSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 2750
  • 1 $0.5930
  • 10 $0.5140
  • 25 $0.4610
  • 50 $0.4080
  • 100 $0.3550
  • 250 $0.3260
  • 500 $0.2960
  • 1,000 $0.2530
$0.2530 / $0.5930 Buy Now
DISTI # BSL211SPH6327XTSA1CT-ND
DigiKey MOSFET P-CH 20V 4.7A TSOP-6 Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 8233
In Stock
  • 1 $0.9500
  • 10 $0.5930
  • 100 $0.3862
  • 500 $0.2971
  • 1,000 $0.2684
  • 3,000 $0.2318
  • 6,000 $0.2134
  • 9,000 $0.2040
  • 15,000 $0.1934
  • 21,000 $0.1880
$0.1880 / $0.9500 Buy Now
DISTI # BSL211SPH6327XTSA1
Avnet Americas Trans MOSFET P-CH 20V 4.7A 6-Pin TSOP T/R - Tape and Reel (Alt: BSL211SPH6327XTSA1) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # 726-BSL211SPH6327XTS
Mouser Electronics MOSFETs SMALL SIGNAL+P-CH RoHS: Compliant 11812
  • 1 $0.5700
  • 10 $0.4940
  • 100 $0.3420
  • 500 $0.2860
  • 1,000 $0.2440
  • 3,000 $0.2160
  • 6,000 $0.2040
  • 9,000 $0.1940
  • 24,000 $0.1880
$0.1880 / $0.5700 Buy Now
Future Electronics Single P-Channel 20 V 67 mOhm 8.3 nC OptiMOS™Small Signal Mosfet - P-TSOP6-6 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks Container: Reel 0
Reel
  • 3,000 $0.2050
  • 6,000 $0.1990
  • 9,000 $0.1960
  • 12,000 $0.1950
  • 15,000 $0.1900
$0.1900 / $0.2050 Buy Now
Future Electronics Single P-Channel 20 V 67 mOhm 8.3 nC OptiMOS™Small Signal Mosfet - P-TSOP6-6 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks Container: Reel 0
Reel
  • 3,000 $0.2050
  • 6,000 $0.1990
  • 9,000 $0.1960
  • 12,000 $0.1950
  • 15,000 $0.1900
$0.1900 / $0.2050 Buy Now
DISTI # BSL211SPH6327XTSA1
TME Transistor: P-MOSFET, unipolar, -20V, -4.7A, 2W, PG-TSOP-6 Min Qty: 1 0
  • 1 $0.5500
  • 10 $0.4800
  • 100 $0.3420
  • 250 $0.2950
  • 500 $0.2660
  • 1,000 $0.2420
  • 3,000 $0.2120
  • 6,000 $0.1980
  • 9,000 $0.1960
$0.1960 / $0.5500 RFQ
DISTI # C1S322001057712
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape 3000
  • 5 $0.5240
  • 50 $0.4540
  • 100 $0.3140
  • 200 $0.3130
  • 500 $0.2620
  • 1,000 $0.2260
$0.2260 / $0.5240 Buy Now
DISTI # C1S322000448795
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes 3000
  • 3,000 $0.1870
$0.1870 Buy Now
DISTI # SP001100652
EBV Elektronik Trans MOSFET P-CH 20V 4.7A 6-Pin TSOP T/R (Alt: SP001100652) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 19 Weeks, 0 Days EBV - 0
Buy Now

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Part Data Attributes for BSL211SPH6327XTSA1 by Infineon Technologies AG
Parametric Data

BSL211SPH6327XTSA1
Infineon Technologies AG
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
18 Weeks
Samacsys Manufacturer
Infineon
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
26 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
20 V
Drain Current-Max (ID)
4.7 A
Drain-source On Resistance-Max
0.067 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G6
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
6
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
P-CHANNEL
Pulsed Drain Current-Max (IDM)
18.8 A
Surface Mount
YES
Terminal Finish
Tin (Sn)
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. BSL211SPH6327XTSA1
    Infineon Technologies AG
    Power Field-Effect Transistor, 4.7A I(D), 20V, 0.067ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TSOP-6
    VS

Alternate Parts for BSL211SPH6327XTSA1

This table gives cross-reference parts and alternative options found for BSL211SPH6327XTSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSL211SPH6327XTSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
BSL211SPH6327 Power Field-Effect Transistor, 4.7A I(D), 20V, 0.067ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP-6 Infineon Technologies AG BSL211SPH6327XTSA1 vs BSL211SPH6327
BSL211SPL6327XT Power Field-Effect Transistor, 4.7A I(D), 20V, 0.067ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, TSOP-6 Infineon Technologies AG BSL211SPH6327XTSA1 vs BSL211SPL6327XT
BSL211SP Power Field-Effect Transistor, 4.7A I(D), 20V, 0.067ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, PLASTIC, TSOP-6 Infineon Technologies AG BSL211SPH6327XTSA1 vs BSL211SP
Part Number Description Manufacturer Compare
BSL211SP Power Field-Effect Transistor, 4.7A I(D), 20V, 0.067ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, PLASTIC, TSOP-6 Infineon Technologies AG BSL211SPH6327XTSA1 vs BSL211SP
DMP2066LDMQ-7 Power Field-Effect Transistor, 4.6A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6 Diodes Incorporated BSL211SPH6327XTSA1 vs DMP2066LDMQ-7
BSL211SPH6327 Power Field-Effect Transistor, 4.7A I(D), 20V, 0.067ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP-6 Infineon Technologies AG BSL211SPH6327XTSA1 vs BSL211SPH6327

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