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Part Details for BSC150N03LDGATMA1 by Infineon Technologies AG
Overview of BSC150N03LDGATMA1 by Infineon Technologies AG
- Distributor Offerings: (17 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Available)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSC150N03LDGATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
60R2516
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Newark | Mosfet, N Channel, 30V, 20A, Pg-Tsdson, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:20A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Infineon BSC150N03LDGATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 3814 |
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$0.3950 / $1.0400 | Buy Now |
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DISTI #
BSC150N03LDGATMA1CT-ND
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DigiKey | MOSFET 2N-CH 30V 8A 8TDSON Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
50126 In Stock |
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$0.3285 / $1.3900 | Buy Now |
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DISTI #
BSC150N03LDGATMA1
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Avnet Americas | Transistor MOSFET Array Dual N-CH 30V 20A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC150N03LDGATMA1) RoHS: Compliant Min Qty: 952 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 2258 Partner Stock |
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$0.3257 / $0.3832 | Buy Now |
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DISTI #
BSC150N03LDGATMA1
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Avnet Americas | Transistor MOSFET Array Dual N-CH 30V 20A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC150N03LDGATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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DISTI #
726-BSC150N03LDGATMA
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Mouser Electronics | MOSFETs N-Ch 30V 20A TDSON-8 OptiMOS 3 RoHS: Compliant | 2796 |
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$0.3280 / $0.6500 | Buy Now |
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DISTI #
V72:2272_06384773
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Arrow Electronics | Trans MOSFET N-CH 30V 8A 8-Pin TDSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2327 Container: Cut Strips | Americas - 76 |
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$0.3245 / $0.4978 | Buy Now |
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Future Electronics | Dual N-Channel 30 V 15 mOhm 13.2 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Container: Reel | 0Reel |
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$0.3200 / $0.3300 | Buy Now |
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Future Electronics | Dual N-Channel 30 V 15 mOhm 13.2 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Container: Reel | 0Reel |
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$0.3200 / $0.3300 | Buy Now |
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DISTI #
32730884
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Verical | Trans MOSFET N-CH 30V 8A 8-Pin TDSON EP T/R Min Qty: 72 Package Multiple: 1 | Americas - 4100 |
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$0.4300 / $0.4400 | Buy Now |
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DISTI #
69675051
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Verical | Trans MOSFET N-CH 30V 8A 8-Pin TDSON EP T/R Min Qty: 19 Package Multiple: 1 Date Code: 2327 | Americas - 76 |
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$0.3245 / $0.4346 | Buy Now |
Part Details for BSC150N03LDGATMA1
BSC150N03LDGATMA1 CAD Models
BSC150N03LDGATMA1 Part Data Attributes
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BSC150N03LDGATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC150N03LDGATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 8A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-F6 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 10 mJ | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.022 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 26 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC150N03LDGATMA1
This table gives cross-reference parts and alternative options found for BSC150N03LDGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC150N03LDGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSC150N03LDG | Power Field-Effect Transistor, 8A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC150N03LDGATMA1 vs BSC150N03LDG |