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Transistors Power Field-Effect Transistors BSC030N04NSGATMA1

BSC030N04NSGATMA1
Infineon Technologies AG
Description: Power Field-Effect Transistor, 23A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Overview of BSC030N04NSGATMA1 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Automotive

Price & Stock for BSC030N04NSGATMA1 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 60R2487
Newark Mosfet, N Ch, 40V, 100A, Pg-Tsdson, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon BSC030N04NSGATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 4770
  • 1 $1.2000
  • 10 $0.9770
  • 25 $0.9040
  • 50 $0.8320
  • 100 $0.7590
  • 250 $0.7020
  • 500 $0.6440
  • 1,000 $0.5240
$0.5240 / $1.2000 Buy Now
DISTI # BSC030N04NSGATMA1CT-ND
DigiKey MOSFET N-CH 40V 23A/100A TDSON Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 44405
In Stock
  • 1 $1.1500
  • 10 $0.9390
  • 100 $0.7303
  • 500 $0.6190
  • 1,000 $0.5042
  • 2,000 $0.4747
  • 5,000 $0.4521
  • 10,000 $0.4312
$0.4312 / $1.1500 Buy Now
DISTI # BSC030N04NSGATMA1
Avnet Americas Trans MOSFET N-CH 40V 23A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC030N04NSGATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 5,000 $0.4590
  • 10,000 $0.4447
  • 20,000 $0.4304
  • 30,000 $0.4160
  • 40,000 $0.4017
$0.4017 / $0.4590 Buy Now
Future Electronics Single N-Channel 40 V 3 mOhm 46 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 22 Container: Reel 105000
Reel
  • 5,000 $0.3750
  • 10,000 $0.3600
$0.3600 / $0.3750 Buy Now
Future Electronics Single N-Channel 40 V 3 mOhm 46 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 22 Container: Reel 5000
Reel
  • 5,000 $0.3750
  • 10,000 $0.3650
$0.3650 / $0.3750 Buy Now
Bristol Electronics   49
RFQ
DISTI # BSC030N04NSGATMA1
TME Transistor: N-MOSFET, unipolar, 40V, 100A, 83W, PG-TDSON-8 Min Qty: 1 0
  • 1 $0.7510
  • 5 $0.6020
  • 25 $0.4840
  • 100 $0.4210
  • 1,000 $0.3920
$0.3920 / $0.7510 RFQ
Ameya Holding Limited Single N-Channel 40 V 3 mOhm 46 nC OptiMOS™ Power Mosfet - TDSON-8 5000
RFQ
DISTI # SP000354811
EBV Elektronik Trans MOSFET N-CH 40V 23A 8-Pin TDSON T/R (Alt: SP000354811) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now
New Advantage Corporation Single N-Channel 40 V 3 mOhm 46 nC OptiMOS� Power Mosfet - TDSON-8 RoHS: Compliant Min Qty: 1 Package Multiple: 5000 100000
  • 5,000 $0.5143
  • 100,000 $0.4800
$0.4800 / $0.5143 Buy Now

CAD Models for BSC030N04NSGATMA1 by Infineon Technologies AG
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Part Data Attributes for BSC030N04NSGATMA1 by Infineon Technologies AG
Parametric Data

BSC030N04NSGATMA1
Infineon Technologies AG
Buy Now
-
-
Pbfree Code
No
Rohs Code
Yes
Part Life Cycle Code
Not Recommended
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
SMALL OUTLINE, R-PDSO-F5
Pin Count
8
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Factory Lead Time
20 Weeks
Samacsys Manufacturer
Infineon
Avalanche Energy Rating (Eas)
115 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
40 V
Drain Current-Max (ID)
23 A
Drain-source On Resistance-Max
0.003 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-F8
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
400 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin (Sn)
Terminal Form
FLAT
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. BSC030N04NSGATMA1
    Infineon Technologies AG
    Power Field-Effect Transistor, 23A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
    VS

Resources and Additional Insights for BSC030N04NSGATMA1

Reference Designs related to BSC030N04NSGATMA1

  • Turn-key reference design kit for low voltage, high-performance, high-efficiency, and high RPM PMSM/BLDC motor drive applications

    The REF-Vacuum-C101-2ED is a reference design kit featuring IMC101T iMOTION controller, 2ED2304 SOI half bridge gate driver and BSC030N04NS OptiMOS. This reference design kit demonstrates our thin-film-SOI and Advanced Motion Control Engine (MCE 2.0) technologies for low-voltage, permanent-magnet motors drive up to 120KRPM speed, and inverter section rating of 30 V and 25 A. It is optimized for major low-voltage home appliances like vacuums, fans, pumps, compressors and other low voltage motor drive applications.

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