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BS170_D75Z by:

N-Channel Enhancement Mode Field Effect Transistor, 3LD, TO-92, MOLDED, 0.200 IN LINE SPACING LD FORM (J61Z OPTION), 2000/AMMO

Part Details for BS170_D75Z by Fairchild Semiconductor Corporation

Overview of BS170_D75Z by Fairchild Semiconductor Corporation

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Part Details for BS170_D75Z

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BS170_D75Z Part Data Attributes:

BS170_D75Z Fairchild Semiconductor Corporation
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BS170_D75Z Fairchild Semiconductor Corporation N-Channel Enhancement Mode Field Effect Transistor, 3LD, TO-92, MOLDED, 0.200 IN LINE SPACING LD FORM (J61Z OPTION), 2000/AMMO
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-92
Package Description TO-92, 3 PIN
Pin Count 3
Manufacturer Package Code 3LD, TO-92, MOLDED, 0.200 IN LINE SPACING LD FORM (J61Z OPTION)
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.5 A
Drain-source On Resistance-Max 5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 10 pF
JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.83 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN SILVER COPPER
Terminal Form THROUGH-HOLE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON

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