Part Details for BLP10H603AZ by Ampleon
Overview of BLP10H603AZ by Ampleon
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Part Details for BLP10H603AZ
BLP10H603AZ CAD Models
BLP10H603AZ Part Data Attributes
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BLP10H603AZ
Ampleon
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Datasheet
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BLP10H603AZ
Ampleon
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MO-229, HVSON-12
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | AMPLEON NETHERLANDS B V | |
| Package Description | HVSON-12 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 104 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | L BAND | |
| JEDEC-95 Code | MO-229 | |
| JESD-30 Code | R-PDSO-N12 | |
| Number of Elements | 1 | |
| Number of Terminals | 12 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Reference Standard | IEC-60134 | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |