Datasheets
BLF6G13L-250P,112 by:

RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4

Part Details for BLF6G13L-250P,112 by Ampleon

Overview of BLF6G13L-250P,112 by Ampleon

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Applications Consumer Electronics

Price & Stock for BLF6G13L-250P,112

Part # Distributor Description Stock Price Buy
DISTI # BLF6G13L-250P,112
Avnet Americas Transistor RF FET N-CH 100V 4.75A 1300MHz 5-Pin SOT-1121A Bulk - Rail/Tube (Alt: BLF6G13L-250P,112) RoHS: Compliant Min Qty: 60 Package Multiple: 60 Lead time: 16 Weeks, 0 Days Container: Tube 0
RFQ
Rochester Electronics BLF6G13L-250P, Power LDMOS transistor, SOT1121 (ACC-4L) RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 38
  • 1 $217.7300
  • 25 $213.3700
  • 100 $204.6700
  • 500 $195.9600
  • 1,000 $185.0700
$185.0700 / $217.7300 Buy Now

Part Details for BLF6G13L-250P,112

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BLF6G13L-250P,112 Part Data Attributes

BLF6G13L-250P,112 Ampleon
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BLF6G13L-250P,112 Ampleon RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer AMPLEON NETHERLANDS B V
Package Description ROHS COMPLIANT, CERAMIC PACKAGE-4
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Ampleon USA Inc.
Case Connection SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 42 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band L BAND
JESD-30 Code R-CDFM-F4
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Reference Standard IEC-60134
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

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