Part Details for BLF6G10-45,112 by NXP Semiconductors
Overview of BLF6G10-45,112 by NXP Semiconductors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for BLF6G10-45,112
BLF6G10-45,112 CAD Models
BLF6G10-45,112 Part Data Attributes
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BLF6G10-45,112
NXP Semiconductors
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Datasheet
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BLF6G10-45,112
NXP Semiconductors
BLF6G10-45
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Part Package Code | DFM | |
Package Description | ROHS COMPLIANT, CERAMIC PACKAGE-2 | |
Pin Count | 2 | |
Manufacturer Package Code | SOT608A | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 65 V | |
Drain Current-Max (ID) | 13 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
JESD-30 Code | R-CDFM-F2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 225 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
Alternate Parts for BLF6G10-45,112
This table gives cross-reference parts and alternative options found for BLF6G10-45,112. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BLF6G10-45,112, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BLF6G10-45 | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 | Ampleon | BLF6G10-45,112 vs BLF6G10-45 |
BLF6G10-45,112 | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 | Ampleon | BLF6G10-45,112 vs BLF6G10-45,112 |
BLF6G10-45,135 | BLF6G10-45 | NXP Semiconductors | BLF6G10-45,112 vs BLF6G10-45,135 |