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BLF6G10-45,112 by:

BLF6G10-45

Part Details for BLF6G10-45,112 by NXP Semiconductors

Overview of BLF6G10-45,112 by NXP Semiconductors

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Applications Automotive

Part Details for BLF6G10-45,112

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BLF6G10-45,112 Part Data Attributes

BLF6G10-45,112 NXP Semiconductors
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BLF6G10-45,112 NXP Semiconductors BLF6G10-45
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code DFM
Package Description ROHS COMPLIANT, CERAMIC PACKAGE-2
Pin Count 2
Manufacturer Package Code SOT608A
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.75
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 13 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 225 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for BLF6G10-45,112

This table gives cross-reference parts and alternative options found for BLF6G10-45,112. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BLF6G10-45,112, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BLF6G10-45 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 Ampleon BLF6G10-45,112 vs BLF6G10-45
BLF6G10-45,112 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 Ampleon BLF6G10-45,112 vs BLF6G10-45,112
BLF6G10-45,135 BLF6G10-45 NXP Semiconductors BLF6G10-45,112 vs BLF6G10-45,135
Part Number Description Manufacturer Compare
BLF6G10-45 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 Ampleon BLF6G10-45,112 vs BLF6G10-45
BLF6G10-45,135 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 Ampleon BLF6G10-45,112 vs BLF6G10-45,135
BLF6G10-45,112 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 Ampleon BLF6G10-45,112 vs BLF6G10-45,112
BLF6G10-45,135 BLF6G10-45 NXP Semiconductors BLF6G10-45,112 vs BLF6G10-45,135

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