Datasheets
BLF3G21-30 by:

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

Part Details for BLF3G21-30 by Ampleon

Overview of BLF3G21-30 by Ampleon

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Applications Telecommunications

Available Datasheets

Part # Manufacturer Description Datasheet
BLF3G21-30 Rochester Electronics LLC BLF3G21-30 - UHF 30W Power LDMOS Transistor (Ampleon Die)

Price & Stock for BLF3G21-30

Part # Distributor Description Stock Price Buy
Rochester Electronics UHF power LDMOS transistor RoHS: Not Compliant Status: Rochester End of Life Min Qty: 1 381
  • 1 $109.0500
  • 25 $106.8700
  • 100 $102.5100
  • 500 $98.1500
  • 1,000 $92.6900
$92.6900 / $109.0500 Buy Now

Part Details for BLF3G21-30

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BLF3G21-30 Part Data Attributes

BLF3G21-30 Ampleon
Buy Now Datasheet
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BLF3G21-30 Ampleon RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer AMPLEON NETHERLANDS B V
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 4.5 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Reference Standard IEC-60134
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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