Datasheets
BLF175,112 by: NXP Semiconductors

BLF175

Part Details for BLF175,112 by NXP Semiconductors

Overview of BLF175,112 by NXP Semiconductors

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Applications Consumer Electronics

Price & Stock for BLF175,112

Part # Distributor Description Stock Price Buy
DISTI # 70R2751
Newark Hf/Vhf Power Mosfet, N Channel, 125V, 4A, Sot123A-4, Drain Source Voltage Vds:125V, Continuous Drain Current Id:4A, Power Dissipation:68W, Operating Frequency Min:-, Operating Frequency Max:-, No. Of Pins:4Pins, Product Range:- Rohs Compliant: Yes |Nxp BLF175,112 Min Qty: 40 Package Multiple: 1 Date Code: 0 Container: Bulk 0
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Part Details for BLF175,112

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BLF175,112 Part Data Attributes

BLF175,112 NXP Semiconductors
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BLF175,112 NXP Semiconductors BLF175
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code SOT
Package Description SOT-123A, 4 PIN
Pin Count 2
Manufacturer Package Code SOT123A
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.75
Additional Feature HIGH RELIABILITY
Case Connection ISOLATED
Configuration SINGLE
DS Breakdown Voltage-Min 125 V
Drain Current-Max (ID) 4 A
Drain-source On Resistance-Max 1.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code O-CRFM-F4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 68 W
Power Dissipation-Max (Abs) 68 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form FLAT
Terminal Position RADIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for BLF175,112

This table gives cross-reference parts and alternative options found for BLF175,112. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BLF175,112, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BLF175{SOT-123} TRANSISTOR Si, RF POWER, FET, FET RF Power NXP Semiconductors BLF175,112 vs BLF175{SOT-123}
MRF148 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET Motorola Mobility LLC BLF175,112 vs MRF148
BLF175 TRANSISTOR VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SOT-123A, 4 PIN, FET RF Power NXP Semiconductors BLF175,112 vs BLF175
Part Number Description Manufacturer Compare
933939780112 TRANSISTOR VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power NXP Semiconductors BLF175,112 vs 933939780112
MRF148A RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 211-07, 4 PIN MACOM BLF175,112 vs MRF148A
BLF175 TRANSISTOR VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SOT-123A, 4 PIN, FET RF Power NXP Semiconductors BLF175,112 vs BLF175
BLF175{SOT-123} TRANSISTOR Si, RF POWER, FET, FET RF Power NXP Semiconductors BLF175,112 vs BLF175{SOT-123}
MRF148A VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-07, 4 PIN Motorola Mobility LLC BLF175,112 vs MRF148A
MRF148 RF Power Field-Effect Transistor Advanced Semiconductor Inc BLF175,112 vs MRF148
MRF148 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET Motorola Mobility LLC BLF175,112 vs MRF148
MRF148A RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.380 INCH, FM-4 Advanced Semiconductor Inc BLF175,112 vs MRF148A

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