Part Details for BGB550 by Infineon Technologies AG
Overview of BGB550 by Infineon Technologies AG
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Applications
Energy and Power Systems
Renewable Energy
Automotive
Part Details for BGB550
BGB550 CAD Models
BGB550 Part Data Attributes:
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BGB550
Infineon Technologies AG
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Datasheet
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BGB550
Infineon Technologies AG
RF Small Signal Bipolar Transistor, 0.35A I(C), 2-Element, L Band, Silicon, NPN, SCT595, 5 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-G5 | |
| Pin Count | 5 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | EMITTER | |
| Collector Current-Max (IC) | 0.35 A | |
| Collector-Emitter Voltage-Max | 4.5 V | |
| Configuration | COMMON EMITTER, 2 ELEMENTS | |
| Highest Frequency Band | L BAND | |
| JESD-30 Code | R-PDSO-G5 | |
| JESD-609 Code | e3 | |
| Number of Elements | 2 | |
| Number of Terminals | 5 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | NPN | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |