Part Details for BFR93AWH6327 by Infineon Technologies AG
Overview of BFR93AWH6327 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Audio and Video Systems
Telecommunications
Entertainment and Gaming
Price & Stock for BFR93AWH6327
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
BFR93AWH6327
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TME | Transistor: NPN, bipolar, RF, 20V, 90mA, 0.3W, SOT323 Min Qty: 5 | 5095 |
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$0.0650 / $0.1460 | Buy Now |
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CHIPMALL.COM LIMITED | 12V 300mW 100@30mA,8V 90mA SOT-323-3 Bipolar Transistors - BJT ROHS | 2450 |
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$0.1017 / $0.1966 | Buy Now |
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LCSC | 12V 300mW 10030mA8V 90mA SOT-323-3 Bipolar Transistors - BJT ROHS | 2450 |
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$0.1038 / $0.2006 | Buy Now |
Part Details for BFR93AWH6327
BFR93AWH6327 CAD Models
BFR93AWH6327 Part Data Attributes:
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BFR93AWH6327
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BFR93AWH6327
Infineon Technologies AG
RF Small Signal Bipolar Transistor, 0.09A I(C), 1-Element, L Band, Silicon, NPN,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Collector Current-Max (IC) | 0.09 A | |
| Collector-Base Capacitance-Max | 0.8 pF | |
| Collector-Emitter Voltage-Max | 12 V | |
| Configuration | SINGLE | |
| Highest Frequency Band | L BAND | |
| JESD-30 Code | R-PDSO-G3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | NPN | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 6000 MHz |