Part Details for BFR181WH6327XTSA1 by Infineon Technologies AG
Overview of BFR181WH6327XTSA1 by Infineon Technologies AG
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
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Price & Stock for BFR181WH6327XTSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
BFR181WH6327XTSA1CT-ND
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DigiKey | RF TRANS NPN 12V 8GHZ SOT323-3 Min Qty: 1 Lead time: 4 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
24072 In Stock |
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$0.0430 / $0.3600 | Buy Now |
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DISTI #
BFR181WH6327XTSA1
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Avnet Americas | Trans GP BJT NPN 12V 0.02A 3-Pin SOT-323 T/R - Tape and Reel (Alt: BFR181WH6327XTSA1) RoHS: Not Compliant Min Qty: 9000 Package Multiple: 3000 Lead time: 4 Weeks, 0 Days Container: Reel | 3000 |
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$0.0466 / $0.0533 | Buy Now |
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DISTI #
97Y1217
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Avnet Americas | Bipolar - RF Transistor, NPN, 12 V, 8 GHz, 175 mW, 20 mA, SOT-323 - Product that comes on tape, but is not reeled (Alt: 97Y1217) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 5 Days Container: Ammo Pack | 106 Partner Stock |
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$0.1660 / $0.3830 | Buy Now |
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Future Electronics | BFR181 Series NPN 12V 20mA 8GHz 175mW RF Transistor PG-SOT323 RoHS: Compliant pbFree: Yes Min Qty: 9000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.1630 / $0.1800 | Buy Now |
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Future Electronics | BFR181 Series NPN 12V 20mA 8GHz 175mW RF Transistor PG-SOT323 RoHS: Compliant pbFree: Yes Min Qty: 9000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.1630 / $0.1800 | Buy Now |
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Rochester Electronics | BFR181W - NPN Silicon RF Transistor for low noise RoHS: Compliant Status: Active Min Qty: 1 | 220 |
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$0.0413 / $0.0486 | Buy Now |
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DISTI #
BFR181WH6327XTSA1
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Avnet Americas | Trans GP BJT NPN 12V 0.02A 3-Pin SOT-323 T/R - Tape and Reel (Alt: BFR181WH6327XTSA1) RoHS: Not Compliant Min Qty: 9000 Package Multiple: 3000 Lead time: 4 Weeks, 0 Days Container: Reel | 3000 |
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$0.0466 / $0.0533 | Buy Now |
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DISTI #
97Y1217
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Avnet Americas | Bipolar - RF Transistor, NPN, 12 V, 8 GHz, 175 mW, 20 mA, SOT-323 - Product that comes on tape, but is not reeled (Alt: 97Y1217) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 5 Days Container: Ammo Pack | 106 Partner Stock |
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$0.1660 / $0.3830 | Buy Now |
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DISTI #
BFR181WH6327XTSA1
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Avnet Americas | Trans GP BJT NPN 12V 0.02A 3-Pin SOT-323 T/R - Tape and Reel (Alt: BFR181WH6327XTSA1) RoHS: Compliant Min Qty: 9000 Package Multiple: 3000 Lead time: 4 Weeks, 0 Days Container: Reel | 0 |
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$0.0433 / $0.0533 | Buy Now |
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DISTI #
BFR181WH6327
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TME | Transistor: NPN, bipolar, RF, 12V, 20mA, 0.175W, SOT323 Min Qty: 5 | 3615 |
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$0.0890 / $0.2500 | Buy Now |
Part Details for BFR181WH6327XTSA1
BFR181WH6327XTSA1 CAD Models
BFR181WH6327XTSA1 Part Data Attributes
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BFR181WH6327XTSA1
Infineon Technologies AG
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Datasheet
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BFR181WH6327XTSA1
Infineon Technologies AG
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, L Band, Silicon, NPN, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 5 Days | |
| Samacsys Manufacturer | Infineon | |
| Collector Current-Max (IC) | 0.02 A | |
| Collector-Base Capacitance-Max | 0.45 pF | |
| Collector-Emitter Voltage-Max | 12 V | |
| Configuration | SINGLE | |
| Highest Frequency Band | L BAND | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | NPN | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 8000 MHz |