Part Details for BFP740FH6327XTSA1 by Infineon Technologies AG
Overview of BFP740FH6327XTSA1 by Infineon Technologies AG
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Telecommunications
Price & Stock for BFP740FH6327XTSA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
98Y5998
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Newark | Rf Trans, Npn, 4V, 0.045A/150Deg C/0.16W, Transistor Polarity:Npn, Collector Emitter Voltage Max:4V, Transition Frequency:45Ghz, Power Dissipation:160Mw, Continuous Collector Current:45Ma, No. Of Pins:4Pins, Product Range:- Rohs Compliant: Yes |Infineon BFP740FH6327XTSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 154 |
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$0.2040 / $0.3310 | Buy Now |
DISTI #
BFP740FH6327XTSA1CT-ND
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DigiKey | RF TRANS NPN 4.7V 42GHZ 4TSFP Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
3403 In Stock |
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$0.1679 / $0.4200 | Buy Now |
DISTI #
BFP740FH6327XTSA1
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Avnet Americas | Trans GP BJT NPN 4V 0.03A 4-Pin TSFP T/R - Tape and Reel (Alt: BFP740FH6327XTSA1) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
DISTI #
98Y5998
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Avnet Americas | Trans GP BJT NPN 4V 0.03A 4-Pin TSFP T/R - Product that comes on tape, but is not reeled (Alt: 98Y5998) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks, 4 Days Container: Ammo Pack | 0 |
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$0.3050 / $0.5530 | Buy Now |
DISTI #
726-BFP740FH6327XTSA
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Mouser Electronics | RF Bipolar Transistors RF BIP TRANSISTOR RoHS: Compliant | 0 |
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$0.1700 / $0.4800 | Order Now |
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Future Electronics | BFP740F: 4.7 V 30 mA Low Noise Silicon Germanium Bipolar RF Transistor - TSFP-4 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks Container: Reel | 0Reel |
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$0.1680 / $0.1790 | Buy Now |
DISTI #
30603838
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Verical | Trans RF BJT NPN 4V 0.045A 160mW Automotive AEC-Q101 4-Pin TSFP T/R RoHS: Compliant Min Qty: 121 Package Multiple: 1 | Americas - 3000 |
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$0.2000 / $0.2600 | Buy Now |
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Rochester Electronics | BFP740 - Ultra Low-Noise SiGe:C Transistors for use up to 12 GHz RoHS: Compliant Status: Active Min Qty: 1 | 416930 |
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$0.1481 / $0.1742 | Buy Now |
DISTI #
C1S322000435560
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Chip1Stop | Trans GP BJT NPN 4V 0.03A 4-Pin TSFP T/R RoHS: Compliant pbFree: Yes Container: Cut Tape | 3000 |
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$0.1620 / $0.4410 | Buy Now |
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CHIPMALL.COM LIMITED | Package/EnclosureTSFP-4 Power dissipation Pd160mW Transistor typeNPN Collector-emitter maximum voltage VCEO4V Collector continuous current45mA | 528 |
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$0.2515 / $0.3135 | Buy Now |
Part Details for BFP740FH6327XTSA1
BFP740FH6327XTSA1 CAD Models
BFP740FH6327XTSA1 Part Data Attributes
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BFP740FH6327XTSA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
BFP740FH6327XTSA1
Infineon Technologies AG
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, S Band, Silicon, NPN, ROHS COMPLIANT, TSFP-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-F3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 15 Weeks, 4 Days | |
Samacsys Manufacturer | Infineon | |
Collector Current-Max (IC) | 0.045 A | |
Collector-Base Capacitance-Max | 0.12 pF | |
Collector-Emitter Voltage-Max | 4.2 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 160 | |
Highest Frequency Band | X BAND | |
JESD-30 Code | R-PDSO-F4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 0.16 W | |
Power Gain-Min (Gp) | 14 dB | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON GERMANIUM CARBON | |
Transition Frequency-Nom (fT) | 45000 MHz |