Part Details for BDP954H6327TR by Infineon Technologies AG
Overview of BDP954H6327TR by Infineon Technologies AG
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Part Details for BDP954H6327TR
BDP954H6327TR CAD Models
BDP954H6327TR Part Data Attributes:
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BDP954H6327TR
Infineon Technologies AG
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Datasheet
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BDP954H6327TR
Infineon Technologies AG
RF Power Bipolar Transistor, 1-Element, Silicon, PNP, SOT-223, 4 PIN
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Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-G4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 3 A | |
Collector-Emitter Voltage-Max | 100 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 15 | |
JESD-30 Code | R-PDSO-G4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | PNP | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 100 MHz |