There are no models available for this part yet.
Overview of BCX5110TC by Diodes Incorporated
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Education and Research
Industrial Automation
Electronic Manufacturing
Price & Stock for BCX5110TC by Diodes Incorporated
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
BCX5110TC
|
Avnet Americas | PWR MID PERF TRANSISTOR SOT89 T&R 4K - Tape and Reel (Alt: BCX5110TC) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 28 Weeks, 0 Days Container: Reel | 0 |
|
$0.0443 | Buy Now |
CAD Models for BCX5110TC by Diodes Incorporated
Part Data Attributes for BCX5110TC by Diodes Incorporated
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
DIODES INC
|
Package Description
|
SMALL OUTLINE, R-PSSO-F3
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Factory Lead Time
|
28 Weeks
|
Samacsys Manufacturer
|
Diodes Incorporated
|
Case Connection
|
COLLECTOR
|
Collector Current-Max (IC)
|
1 A
|
Collector-Base Capacitance-Max
|
25 pF
|
Collector-Emitter Voltage-Max
|
45 V
|
Configuration
|
SINGLE
|
DC Current Gain-Min (hFE)
|
63
|
JESD-30 Code
|
R-PSSO-F3
|
JESD-609 Code
|
e3
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Temperature-Max
|
150 °C
|
Operating Temperature-Min
|
-55 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
260
|
Polarity/Channel Type
|
PNP
|
Power Dissipation-Max (Abs)
|
2 W
|
Surface Mount
|
YES
|
Terminal Finish
|
MATTE TIN
|
Terminal Form
|
FLAT
|
Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Transition Frequency-Nom (fT)
|
150 MHz
|
VCEsat-Max
|
0.5 V
|