Part Details for BCR135WE6327 by Infineon Technologies AG
Overview of BCR135WE6327 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for BCR135WE6327
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | BCR135 - Digital Transistor ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 2900 |
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$0.0195 / $0.0230 | Buy Now |
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ComSIT USA | NPN SILICON DIGITAL TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon RoHS: Not Compliant | Europe - 91700 |
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RFQ | |
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Sense Electronic Company Limited | SOT323 | 45384 |
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RFQ |
Part Details for BCR135WE6327
BCR135WE6327 CAD Models
BCR135WE6327 Part Data Attributes:
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BCR135WE6327
Infineon Technologies AG
Buy Now
Datasheet
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BCR135WE6327
Infineon Technologies AG
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-G3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 4.7 | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Emitter Voltage-Max | 50 V | |
Configuration | SINGLE WITH BUILT-IN RESISTOR | |
DC Current Gain-Min (hFE) | 70 | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 0.25 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 150 MHz |