Datasheets
BCR135E6433 by:

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Part Details for BCR135E6433 by Siemens

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Part Details for BCR135E6433

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BCR135E6433 Part Data Attributes

BCR135E6433 Siemens
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BCR135E6433 Siemens Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.21.00.75
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 21.3636
Collector Current-Max (IC) 0.1 A
Collector-Emitter Voltage-Max 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 70
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 0.2 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 150 MHz
VCEsat-Max 0.3 V

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