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BCM856BS/DG,125 by:

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, PNP, Silicon

Part Details for BCM856BS/DG,125 by Nexperia

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Part Details for BCM856BS/DG,125

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BCM856BS/DG,125 Part Data Attributes

BCM856BS/DG,125 Nexperia
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BCM856BS/DG,125 Nexperia Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, PNP, Silicon
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Package Description SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code compliant
ECCN Code EAR99
Collector Current-Max (IC) 0.1 A
Collector-Emitter Voltage-Max 65 V
Configuration SEPARATE, 2 ELEMENTS
DC Current Gain-Min (hFE) 200
JESD-30 Code R-PDSO-G6
Number of Elements 2
Number of Terminals 6
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type PNP
Reference Standard AEC-Q101; IEC-60134
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 175 MHz

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