Datasheets
BB669 by:

Variable Capacitance Diode, Very High Frequency, 56.5pF C(T), Silicon, ROHS COMPLIANT PACKAGE-2

Part Details for BB669 by Infineon Technologies AG

Overview of BB669 by Infineon Technologies AG

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Applications Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

Part Details for BB669

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BB669 Part Data Attributes

BB669 Infineon Technologies AG
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BB669 Infineon Technologies AG Variable Capacitance Diode, Very High Frequency, 56.5pF C(T), Silicon, ROHS COMPLIANT PACKAGE-2
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description R-PDSO-G2
Pin Count 2
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Factory Lead Time 4 Weeks
Additional Feature CAPACITANCE MATCHED TO 2%
Configuration SINGLE
Diode Cap Tolerance 9.33%
Diode Capacitance Ratio-Min 14.5
Diode Capacitance-Nom 56.5 pF
Diode Element Material SILICON
Diode Type VARIABLE CAPACITANCE DIODE
Frequency Band VERY HIGH FREQUENCY
JESD-30 Code R-PDSO-G2
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 35 V
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Variable Capacitance Diode Classification ABRUPT

Alternate Parts for BB669

This table gives cross-reference parts and alternative options found for BB669. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BB669, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BBY31-T DIODE UHF BAND, 16.5 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode NXP Semiconductors BB669 vs BBY31-T
MA334 Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 30V, Silicon, MINI TYPE, 2 PIN Panasonic Electronic Components BB669 vs MA334
934042230135 DIODE VHF-UHF BAND, 38.5 pF, 32 V, SILICON, VARIABLE CAPACITANCE DIODE, PLASTIC, SMD, UMD2, 2 PIN, Variable Capacitance Diode NXP Semiconductors BB669 vs 934042230135
BB179,135 BB179 - UHF variable capacitance diode SOD 2-Pin NXP Semiconductors BB669 vs BB179,135
BB179B,115 BB179B - UHF variable capacitance diode SOD 2-Pin NXP Semiconductors BB669 vs BB179B,115
ZMV930TC Variable Capacitance Diode, Very High Frequency, 4.9pF C(T), 12V, Silicon, Hyperabrupt, SOD-323, 2 PIN Diodes Incorporated BB669 vs ZMV930TC
1SV306 DIODE UHF BAND, 15 pF, SILICON, VARIABLE CAPACITANCE DIODE, 1-2U1A, 4 PIN, Variable Capacitance Diode Toshiba America Electronic Components BB669 vs 1SV306
SMV2023-001 Variable Capacitance Diode, 4.9pF C(T), 22V, Silicon, Hyperabrupt, SOT-23, 3 PIN Skyworks Solutions Inc BB669 vs SMV2023-001
934033290115 DIODE UHF BAND, 18.75 pF, SILICON, VARIABLE CAPACITANCE DIODE, PLASTIC, SMD, 2 PIN, Variable Capacitance Diode NXP Semiconductors BB669 vs 934033290115
1N4789 Variable Capacitance Diode, 12pF C(T), Silicon, Abrupt, DO-7, Spectrum Control BB669 vs 1N4789

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