Datasheets
AUIRFS3206TRL by:

Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

Part Details for AUIRFS3206TRL by Infineon Technologies AG

Overview of AUIRFS3206TRL by Infineon Technologies AG

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Applications Automotive

Price & Stock for AUIRFS3206TRL

Part # Distributor Description Stock Price Buy
DISTI # AUIRFS3206TRLTR-ND
DigiKey MOSFET N-CH 60V 210A D2PAK Min Qty: 800 Lead time: 12 Weeks Container: Tape & Reel (TR) Limited Supply - Call
  • 800 $3.3112
  • 1,600 $2.8352
  • 2,400 $2.6696
$2.6696 / $3.3112 Buy Now
DISTI # AUIRFS3206TRL
Avnet Americas Trans MOSFET N-CH 60V 210A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: AUIRFS3206TRL) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 53 Weeks, 1 Days Container: Reel 0
  • 800 $3.4833
  • 1,600 $3.3809
  • 3,200 $3.2784
  • 4,800 $3.1759
  • 6,400 $3.0735
  • 8,000 $2.9710
  • 80,000 $2.8686
$2.8686 / $3.4833 Buy Now
DISTI # 942-AUIRFS3206TRL
Mouser Electronics MOSFET 60V 210A 3 mOhm Automotive MOSFET RoHS: Compliant 780
  • 1 $5.4800
  • 10 $4.6000
  • 25 $4.3400
  • 100 $3.7200
  • 250 $3.5100
  • 500 $3.3100
  • 800 $2.8100
  • 2,400 $2.6600
$2.6600 / $5.4800 Buy Now
DISTI # SP001515868
EBV Elektronik Trans MOSFET N-CH 60V 210A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001515868) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now
LCSC 60V 120A 3m75A10V 300W 4V150uA 1PCSNChannel D2PAK MOSFETs ROHS 10
  • 1 $6.2115
  • 10 $6.0578
  • 30 $5.9563
  • 100 $5.8534
$5.8534 / $6.2115 Buy Now

Part Details for AUIRFS3206TRL

AUIRFS3206TRL CAD Models

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AUIRFS3206TRL Part Data Attributes:

AUIRFS3206TRL Infineon Technologies AG
Buy Now Datasheet
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AUIRFS3206TRL Infineon Technologies AG Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description D2PAK-3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 53 Weeks, 1 Day
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 170 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.003 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 840 A
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for AUIRFS3206TRL

This table gives cross-reference parts and alternative options found for AUIRFS3206TRL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRFS3206TRL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFS3206TRRPBF Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 Infineon Technologies AG AUIRFS3206TRL vs IRFS3206TRRPBF
Part Number Description Manufacturer Compare
IRFS3206TRRPBF Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 Infineon Technologies AG AUIRFS3206TRL vs IRFS3206TRRPBF

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