Datasheets
AUIRF2804S-7P by:

Power Field-Effect Transistor, 240A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, ROHS COMPLIANT, PLASTIC, D2PAK-7

Part Details for AUIRF2804S-7P by Infineon Technologies AG

Overview of AUIRF2804S-7P by Infineon Technologies AG

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Price & Stock for AUIRF2804S-7P

Part # Distributor Description Stock Price Buy
DISTI # 70019344
RS AUIRF2804S-7P N-channel MOSFET Transistor, 320 A, 40 V, 7-Pin D2PAK | Infineon AUIRF2804S-7P RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk 0
  • 3,000 $4.7300
  • 15,000 $4.5000
  • 30,000 $4.2600
  • 60,000 $4.0200
  • 300,000 $3.7900
$3.7900 / $4.7300 RFQ

Part Details for AUIRF2804S-7P

AUIRF2804S-7P CAD Models

AUIRF2804S-7P Part Data Attributes:

AUIRF2804S-7P Infineon Technologies AG
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AUIRF2804S-7P Infineon Technologies AG Power Field-Effect Transistor, 240A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, ROHS COMPLIANT, PLASTIC, D2PAK-7
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ROHS COMPLIANT, PLASTIC, D2PAK-7
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 52 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 1050 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 240 A
Drain-source On Resistance-Max 0.0016 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263CB
JESD-30 Code R-PSSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 330 W
Pulsed Drain Current-Max (IDM) 1360 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for AUIRF2804S-7P

This table gives cross-reference parts and alternative options found for AUIRF2804S-7P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRF2804S-7P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF2804S-7PPBF Power Field-Effect Transistor, 160A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-7 International Rectifier AUIRF2804S-7P vs IRF2804S-7PPBF
IRF2804STRL-7P Power Field-Effect Transistor, 160A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-7 International Rectifier AUIRF2804S-7P vs IRF2804STRL-7P
IRF2804S-7PTRL Power Field-Effect Transistor, 160A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-7 International Rectifier AUIRF2804S-7P vs IRF2804S-7PTRL
IRF2804S-7PPBF Power Field-Effect Transistor, 160A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-7 Infineon Technologies AG AUIRF2804S-7P vs IRF2804S-7PPBF
IRF2804S-7P Power Field-Effect Transistor, 160A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-7 International Rectifier AUIRF2804S-7P vs IRF2804S-7P

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