Datasheets
ATP201 by:

Power Field-Effect Transistor, 35A I(D), 30V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, ATPAK-3

Part Details for ATP201 by SANYO Electric Co Ltd

Overview of ATP201 by SANYO Electric Co Ltd

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Part Details for ATP201

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ATP201 Part Data Attributes

ATP201 SANYO Electric Co Ltd
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ATP201 SANYO Electric Co Ltd Power Field-Effect Transistor, 35A I(D), 30V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, ATPAK-3
Part Life Cycle Code Transferred
Ihs Manufacturer SANYO ELECTRIC CO LTD
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 10 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 35 A
Drain-source On Resistance-Max 0.017 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 30 W
Pulsed Drain Current-Max (IDM) 105 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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