Part Details for ATF-531P8-TR2G by Avago Technologies
Overview of ATF-531P8-TR2G by Avago Technologies
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Environmental Monitoring
Space Technology
Telecommunications
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| UCC2808ADTR-2G4 | Texas Instruments | Low-Power Current-Mode Push-Pull PWM 8-SOIC -40 to 85 | |
| UCC3808APWTR-2G4 | Texas Instruments | Low-Power Current-Mode Push-Pull PWM 8-TSSOP 0 to 70 | |
| UCC2808DTR-2G4 | Texas Instruments | Low Power Current Mode Push-Pull PWM 8-SOIC -40 to 85 |
Part Details for ATF-531P8-TR2G
ATF-531P8-TR2G CAD Models
ATF-531P8-TR2G Part Data Attributes
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ATF-531P8-TR2G
Avago Technologies
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Datasheet
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Compare Parts:
ATF-531P8-TR2G
Avago Technologies
C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, PLASTIC, LPCC-8
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | AVAGO TECHNOLOGIES INC | |
| Part Package Code | SON | |
| Package Description | SMALL OUTLINE, S-PDSO-N8 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW NOISE | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 7 V | |
| Drain Current-Max (ID) | 0.3 A | |
| FET Technology | HIGH ELECTRON MOBILITY | |
| Highest Frequency Band | C BAND | |
| JEDEC-95 Code | MO-229 | |
| JESD-30 Code | S-PDSO-N8 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Gain-Min (Gp) | 18.5 dB | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for ATF-531P8-TR2G
This table gives cross-reference parts and alternative options found for ATF-531P8-TR2G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ATF-531P8-TR2G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| ATF-531P8-TR1G | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, PLASTIC, LPCC-8 | Agilent Technologies Inc | ATF-531P8-TR2G vs ATF-531P8-TR1G |
| ATF-531P8-TR2 | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, PLASTIC, LPCC-8 | Agilent Technologies Inc | ATF-531P8-TR2G vs ATF-531P8-TR2 |
| ATF-531P8-TR2G | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, PLASTIC, LPCC-8 | Agilent Technologies Inc | ATF-531P8-TR2G vs ATF-531P8-TR2G |
| ATF-531P8-BLK | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, PLASTIC, DFP-N, LCC-8 | Broadcom Limited | ATF-531P8-TR2G vs ATF-531P8-BLK |
| ATF-531P8-BLKG | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, PLASTIC, LPCC-8 | Avago Technologies | ATF-531P8-TR2G vs ATF-531P8-BLKG |
| ATF-531P8-TR1G | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, PLASTIC, LPCC-8 | Broadcom Limited | ATF-531P8-TR2G vs ATF-531P8-TR1G |
| ATF-531P8-TR1 | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, PLASTIC, DFP-N, LCC-8 | Broadcom Limited | ATF-531P8-TR2G vs ATF-531P8-TR1 |
| ATF-531P8-BLKG | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, PLASTIC, LPCC-8 | Agilent Technologies Inc | ATF-531P8-TR2G vs ATF-531P8-BLKG |
| ATF-531P8-TR2 | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, PLASTIC, DFP-N, LCC-8 | Broadcom Limited | ATF-531P8-TR2G vs ATF-531P8-TR2 |