Part Details for ATF-531P8-TR1 by Agilent Technologies Inc
Overview of ATF-531P8-TR1 by Agilent Technologies Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Environmental Monitoring
Space Technology
Telecommunications
Part Details for ATF-531P8-TR1
ATF-531P8-TR1 CAD Models
ATF-531P8-TR1 Part Data Attributes
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ATF-531P8-TR1
Agilent Technologies Inc
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Datasheet
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ATF-531P8-TR1
Agilent Technologies Inc
RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, PLASTIC, LPCC-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | AGILENT TECHNOLOGIES INC | |
| Part Package Code | SON | |
| Package Description | SMALL OUTLINE, S-PDSO-N8 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Additional Feature | LOW NOISE | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 7 V | |
| Drain Current-Max (ID) | 0.3 A | |
| FET Technology | HIGH ELECTRON MOBILITY | |
| Highest Frequency Band | C BAND | |
| JEDEC-95 Code | MO-229 | |
| JESD-30 Code | S-PDSO-N8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 1 W | |
| Power Gain-Min (Gp) | 18.5 dB | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for ATF-531P8-TR1
This table gives cross-reference parts and alternative options found for ATF-531P8-TR1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ATF-531P8-TR1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| ATF-531P8-TR1G | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, PLASTIC, LPCC-8 | Agilent Technologies Inc | ATF-531P8-TR1 vs ATF-531P8-TR1G |
| ATF-531P8-TR2 | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, PLASTIC, LPCC-8 | Agilent Technologies Inc | ATF-531P8-TR1 vs ATF-531P8-TR2 |
| ATF-531P8-TR2G | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, PLASTIC, LPCC-8 | Agilent Technologies Inc | ATF-531P8-TR1 vs ATF-531P8-TR2G |
| ATF-531P8-BLK | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, PLASTIC, DFP-N, LCC-8 | Broadcom Limited | ATF-531P8-TR1 vs ATF-531P8-BLK |
| ATF-531P8-BLKG | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, PLASTIC, LPCC-8 | Avago Technologies | ATF-531P8-TR1 vs ATF-531P8-BLKG |
| ATF-531P8-TR1G | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, PLASTIC, LPCC-8 | Broadcom Limited | ATF-531P8-TR1 vs ATF-531P8-TR1G |
| ATF-531P8-TR1 | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, PLASTIC, DFP-N, LCC-8 | Broadcom Limited | ATF-531P8-TR1 vs ATF-531P8-TR1 |
| ATF-531P8-BLKG | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, PLASTIC, LPCC-8 | Agilent Technologies Inc | ATF-531P8-TR1 vs ATF-531P8-BLKG |
| ATF-531P8-TR2 | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, PLASTIC, DFP-N, LCC-8 | Broadcom Limited | ATF-531P8-TR1 vs ATF-531P8-TR2 |